SUPPORTING SUBSTRATE FOR SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING DEVICE WITH HIGH PERFORMANCE VERTICAL STRUCTURE, CAPABLE OF OBTAINING GOOD NITRIDE SEMICONDUCTOR SINGLE CRYSTALLINE MULTI-LAYER THIN FILM THROUGH WAFER BONDING

摘要

PURPOSE: A supporting substrate for a semiconductor light emitting device and a semiconductor light emitting device with high performance vertical structure are provided to improve chip yield and productivity, by using a wet etching process in a single chip process.;CONSTITUTION: A selected supporting substrate formed with a predetermined material is prepared. A sacrificial layer is stacked on the top of the supporting substrate. A heat sink layer is stacked on the top of the sacrificial layer. A bonding layer is stacked on the top of the heat sink layer. The difference of a thermal expansion coefficient between the selected supporting substrate and an initial growth substrate is below 2ppm. The thickness of the heat sink layer is below 0.1 micron meter or 500 micron meter.;COPYRIGHT KIPO 2010