Method for fabricating solar cell applications using inductively coupled plasma chemical vapor deposition

摘要

The present invention relates to a solar cell manufacturing method using an inductively coupled plasma chemical vapor deposition method. According to the present invention, in manufacturing a solar cell including a first electrode, a P-type layer, an intrinsic layer, an N-type layer, and a second electrode, a mixed gas containing hydrogen (H 2) gas and silane (SiH 4) gas is used. An intrinsic layer forming step of forming the intrinsic layer made of a hydrogenated amorphous silicon thin film using an inductively coupled plasma chemical vapor deposition apparatus, wherein the mixed gas is a hydrogen gas to silane gas ratio (H2 /) of the hydrogen gas and silane gas. SiH4 ratio) is provided with a solar cell manufacturing method, characterized in that 8 to 10.