REFLECTIVE MASK CAPABLE OF PREVENTING A CRITICAL DIMENSION CHANGE DUE TO THE REFLECTION OF EUV LIGHT

摘要

PURPOSE: A reflective mask is provided to minimize the critical dimension change of a wafer when increasing the overlapped degree of a shot in the outer region of a wafer.;CONSTITUTION: A reflective mask(300) consists of a substrate(310), multiple date patterns(331,333,335), and an absorbing layer(320). The multiple data patterns are formed in the specific region of a substrate. The absorbing layer is formed in the peripheral region near the outermost pattern, and includes the absorbing layer absorbing lights which are injected into the outermost pattern from a light source and reflected by the outermost pattern. The absorbing layer comprises a first absorbing film(321a), a low reflective film(325), and a second absorbing film(321b).;COPYRIGHT KIPO 2013;[Reference numerals] (AA,CC) Peripheral region; (BB) Data region