EXTREME ULTRAVIOLET RADIATION EXPOSURE MASK CAPABLE OF REDUCING REFLECTIVITY OF EUV LIGHT SOURCE AND EXPOSURE DEVICE INCLUDING THE SAME

摘要

PURPOSE: An extreme ultraviolet radiation exposure mask capable of reducing reflectivity of euv light source and exposure device including the same are provided to enhance yield of semiconductor devices.;CONSTITUTION: An extreme ultraviolet radiation exposure mask (200) comprises a substrate(100), a reflective layer(102) and absorber layers(104). The upper and lower parts of the substrate are bent. The reflective layer is included at the upper part of the substrate. The absorber layer is included at the upper part of the reflective layer. The substrate is bent based on the lower part, concave form or swollen form. The reflective layer includes lamination structure.;COPYRIGHT KIPO 2013