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EXPOSURE PROCESSING METHOD OF A REFLECTIVE PHOTO-MASK, CAPABLE OF EASILY PERFORMING A REPAIRING PROCESS AND A CRITICAL-DIMENSION CORRECTING PROCESS
EXPOSURE PROCESSING METHOD OF A REFLECTIVE PHOTO-MASK, CAPABLE OF EASILY PERFORMING A REPAIRING PROCESS AND A CRITICAL-DIMENSION CORRECTING PROCESS
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机译:能够容易地执行修复过程和临界尺寸校正过程的反射性光罩的曝光处理方法
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摘要
PURPOSE: The exposure processing method of a reflective photo-mask is provided to form a resist pattern self-aligned on the critical dimension of an absorbing pattern using difference between exposure energies of exposure energy to an absorbing pattern and reflected energy from a reflective layer.;CONSTITUTION: A reflective layer(110) is formed on a substrate(100). A capping layer(115) is formed on the reflective layer. A buffer layer is formed on the capping layer. An absorbing layer is formed on the buffer layer. An absorbing pattern(140) and a buffer pattern are formed in order to selectively expose the surface of the capping layer. A resist layer is formed to bury the capping layer and the absorbing layer. The resist layer on the reflective layer is selectively deformed. The deformed resist layer is eliminated.;COPYRIGHT KIPO 2011
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