METHOD FOR FORMING A MASK FOR EXTREME ULTRAVIOLET LITHOGRAPHY CAPABLE OF PERFORMING A REPAIR PROCESS REGARDLESS OF A PROPERTY OF A REFLECTIVE LAYER

摘要

PURPOSE: A method for forming a mask for extreme ultraviolet lithography is provided to simplify a process and a structure of a mask by arranging a buffer silicon film and a buffer molybdenum film to a top part of a reflective layer.;CONSTITUTION: A reflective layer(215) is formed on a substrate(200). A first buffer film and a second buffer film are deposited on the reflective layer. An absorbing layer is formed on the first buffer film and the second buffer film. An absorbing layer pattern(235) is formed by patterning the absorbing layer, and selectively exposes the first buffer film and the second buffer film. A repair process is performed in order to remove a defect generated at a process for forming the absorbing layer pattern. A surface of the reflective layer is exposed by etching an exposing part of the first buffer film and the second buffer film. A cleaning process is performed on the substrate.;COPYRIGHT KIPO 2010