首页> 外国专利> METHOD FOR REPAIRING THE DEFECT OF A PHOTO-MASK, CAPABLE OF IMPROVING THE REPAIRING PROCESS OF A PATTERN AFTER AN ETCHING PROCESS BY REMOVING THE DEFECT OF A RESIST FILM PATTERN

METHOD FOR REPAIRING THE DEFECT OF A PHOTO-MASK, CAPABLE OF IMPROVING THE REPAIRING PROCESS OF A PATTERN AFTER AN ETCHING PROCESS BY REMOVING THE DEFECT OF A RESIST FILM PATTERN

机译:修补光掩膜缺陷的方法,该方法能够通过消除抗蚀膜图案的缺陷来改善蚀刻过程后图案的修复过程

摘要

PURPOSE: A method for repairing the defect of a photo-mask is provided to prevent the transference of the defects on a pattern after an etching process by detecting the defects of a resist film pattern.;CONSTITUTION: A mask film is formed on a substrate(100). A resist film is formed on the mask film. A resist film pattern(180) is formed on the resist film. The defect of the resist film pattern is detected by the reflection light. The defect of the resist film pattern is repaired through a repairing process. A mask film pattern is formed using the repaired resist film pattern as an etching mask.;COPYRIGHT KIPO 2010
机译:目的:提供一种修复光掩模缺陷的方法,以通过检测抗蚀剂膜图案的缺陷来防止蚀刻工艺后图案上的缺陷转移。;组成:在基板上形成掩模膜(100)。在掩模膜上形成抗蚀剂膜。在抗蚀剂膜上形成抗蚀剂膜图案(180)。通过反射光检测抗蚀剂膜图案的缺陷。抗蚀剂膜图案的缺陷通过修复过程被修复。使用修复后的抗蚀剂膜图形作为蚀刻掩模形成掩模膜图形。; COPYRIGHT KIPO 2010

著录项

  • 公开/公告号KR20100027822A

    专利类型

  • 公开/公告日2010-03-11

    原文格式PDF

  • 申请/专利权人 HYNIX SEMICONDUCTOR INC.;

    申请/专利号KR20080086886

  • 发明设计人 CHUN JUN;

    申请日2008-09-03

  • 分类号H01L21/027;

  • 国家 KR

  • 入库时间 2022-08-21 18:33:09

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