首页> 外国专利> Method of fabricating and repairing a short defect in LCD device having a residue pattern of a predetermined line width removed after forming photo-resist pattern through rear exposure

Method of fabricating and repairing a short defect in LCD device having a residue pattern of a predetermined line width removed after forming photo-resist pattern through rear exposure

机译:在通过后曝光形成光致抗蚀剂图案之后去除具有预定线宽的残留图案的LCD装置中的短路缺陷的制造和修复方法

摘要

A method for repairing a short defect according to the present invention includes forming a first conductive pattern on a substrate, forming a photo-resist pattern on the first conductive pattern using a rear exposure for the first conductive pattern being shorted by a residue pattern, and removing the residue pattern exposed through the photo-resist pattern.
机译:根据本发明的用于修复短路缺陷的方法包括:在基板上形成第一导电图案;使用背面曝光使第一导电图案被残留图案短路,在第一导电图案上形成光致抗蚀剂图案;以及去除通过光刻胶图案暴露的残留图案。

著录项

  • 公开/公告号US7649609B2

    专利类型

  • 公开/公告日2010-01-19

    原文格式PDF

  • 申请/专利权人 SOON SUNG YOO;HEUNG LYUL CHO;

    申请/专利号US20060445193

  • 发明设计人 HEUNG LYUL CHO;SOON SUNG YOO;

    申请日2006-06-02

  • 分类号G02F1/13;

  • 国家 US

  • 入库时间 2022-08-21 18:49:39

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