RESIST PATTERN LINE WIDTH CALCULATING METHOD, MASK PATTERN LINE WIDTH CORRECTION METHOD, OPTICAL PROXIMITY EFFECT CORRECTION METHOD, EXPOSURE MASK FABRICATING METHOD, ELECTRON DRAWING METHOD FOR FABRICATING THE EXPOSURE MASK, EXPOSURE METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a method of calculating a resist pattern line width on the basis of which a pattern line width is calculated for optical proximity effect correction.;SOLUTION: The method of calculating the resist pattern line width comprises steps of: (A) transferring a mask pattern having a line pitch P_m, and a mask pattern line width ML_{(m, n)} on an exposure mask onto a resist material layer formed on a substrate to obtain a resist pattern line width RL_{(m, n)} in a resist pattern; (B) obtaining M pieces of resist pattern line width curves in which the mask pattern line width is an independent variable, and the resist pattern line width is a dependent variable; and then (C) substituting a mask pattern line width ML_{(i, j)} into a resist pattern line width function DR_i in a desired pitch P_i and mask pattern line width ML_{(i, i)}, thereby obtaining a calculated resist pattern line width value CRL(_{i, j}).;COPYRIGHT: (C)2006,JPO&NCIPI