METHOD FOR CORRECTING MASK PATTERN, PROGRAM FOR CORRECTING MASK PATTERN, DEVICE FOR CORRECTING MASK PATTERN, METHOD FOR SETTING EXPOSURE CONDITION, PROGRAM FOR SETTING EXPOSURE CONDITION, DEVICE FOR SETTING EXPOSURE CONDITION, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, PROGRAM FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND DEVICE FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for correcting a mask pattern by which only a pattern that becomes a defect because of incorrect transfer is corrected.;SOLUTION: After specified position information 22B is obtained by each of mutually different defocus conditions, a focus tolerance F in a portion of a mask corresponding to a specified portion is obtained. After ruggedness information 22D at the specified position is obtained, calculation of setting conditions of a stage 13 is tried by considering the ruggedness information 22D so as to render a focus plane (reference plane S1) to be within the focus tolerance F. If the focus plane is not present within the focus tolerance F, factors such as a line width, a line figure and a space between lines are corrected in a portion of a design pattern corresponding to the specified portion and in a portion where the focus plane is out of the focus tolerance F, so as to increase the focus tolerance F.;COPYRIGHT: (C)2009,JPO&INPIT