METHOD FOR FORMING AN EUV EXPOSURE MASK, CAPABLE OF PREVENTING A SHADOW EFFECT BY FORMING A REFLECTIVE LAYER PATTERN BETWEEN ABSORBING LAYER PATTERNS

摘要

PURPOSE: A method for forming an EUV exposure mask is provided to form a wanted pattern by preventing the light reflected from a reflective laeyr of the EUV(Extreme Ultraviolet Radiation) exposure mask from being absorbed in an absorbing layer again.;CONSTITUTION: An absorbing layer pattern(115) is formed on the upper side of a transparent substrate. A reflective layer is formed on the entire upper side of the transparent substrate and the absorbing layer. A reflective layer pattern(135) is formed by planarizing the reflective layer to expose the absorbing layer pattern. The photosensitive pattern is formed on the upper side of the absorbing layer. The absorbing layer is etched using the photosensitive pattern as an etch mask.;COPYRIGHT KIPO 2010