METHOD FOR FORMING A MICRO-PATTERN OF A SEMICONDUCTOR DEVICE, CAPABLE OF PREVENTING A VOID FROM OCCURRING WITHIN AN ETCH MASK PATTERN BY FORMING AN ETCHING MASK LAYER WITH A SPIN COATING PROCESS

摘要

PURPOSE: A method for forming a micro-pattern of a semiconductor device is provided so that an expensive deposition apparatus is not needed by forming an etch mask layer using a spin coating process.;CONSTITUTION: A plurality of first etch mask patterns(130a) are formed on the top of a substrate. The plurality of first etch mask patterns are covered with a buffer layer(160). A plurality of second etch mask patterns(170a) are formed on the buffer layer between two of the first etch mask patterns among the plurality of first etch mask patterns. The substrate is exposed between the first etch mask pattern and the second etch mask pattern as a part of the buffer layer is removed. The exposed part of the substrate is etched to form a micro-pattern.;COPYRIGHT KIPO 2010