HIGH MOBILITY POWER METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

摘要

and mobility P- channel voltage metal oxide semiconductor field effect transistors , according to the embodiment of the present invention , when voltage is applied to the MOSFET gate is negative potential with respect to the source , moving hole (110) in a reverse / accumulation channel according to the crystalline surface, and a current is made to be in the [110] direction . Improved channel mobility of holes of the channel on- state resistance reduces the overall device by it to the glass " . This decreases ON " resistance ;