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High mobility power metal-oxide semiconductor field-effect transistors
High mobility power metal-oxide semiconductor field-effect transistors
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机译:高迁移率功率金属氧化物半导体场效应晶体管
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摘要
High mobility P-channel power metal oxide semiconductor field effect transistors. In accordance with an embodiment of the present invention, a power MOSFET is fabricated such that the holes flow in an inversion/accumulation channel, which is along the (110) crystalline plane, or equivalents, and the current flow is in the [110] direction, or equivalents, when a negative potential is applied to the gate with respect to the source. The enhanced channel mobility of holes leads to a reduction of the channel portion of the on-state resistance, thereby advantageously reducing total “on”resistance of the device.
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