Low temperature implants to improve the BJT current gain

摘要

A process for forming an integrated circuit comprising a bipolar junction transistor (BJT) (1002) and a metal oxide semiconductor (MOS) (1004) transistor, by cooling the integrated circuit substrate to 5 ℃ or lower temperatures, and , the source and drain regions and of the MOS transistor to the emitter area of ​​the BJTs, the minimum dose identified depending on the species, by implanting dopant at the same time, is formed.