School of Information and Communication Technology, KTH, Royal Institute of Technology, Electrum 229, SE-164 40, Kista-Stockholm, Sweden;
School of Information and Communication Technology, KTH, Royal Institute of Technology, Electrum 229, SE-164 40, Kista-Stockholm, Sweden;
School of Information and Communication Technology, KTH, Royal Institute of Technology, Electrum 229, SE-164 40, Kista-Stockholm, Sweden;
School of Information and Communication Technology, KTH, Royal Institute of Technology, Electrum 229, SE-164 40, Kista-Stockholm, Sweden;
School of Information and Communication Technology, KTH, Royal Institute of Technology, Electrum 229, SE-164 40, Kista-Stockholm, Sweden;
School of Information and Communication Technology, KTH, Royal Institute of Technology, Electrum 229, SE-164 40, Ki;
bipolar junction transistors (BJTs); power transistors; silicon carbide;
机译:具有长期稳定电流增益的高压(2.8 kV)免注入4H-SiC BJT
机译:发射极宽度和发射极-基极距离对4H-SiC功率BJT中电流增益的影响
机译:具有多浅沟道结终止扩展的5.8kV无植入4H-SiC BJT
机译:1200 V 4H-SiC BJT,具有60的共同发射极电流增益和低导通电阻
机译:使用高级Boussinesq模型研究波阻和电流对浅水波非线性相互作用的影响。
机译:通过改善高效量子点发光二极管的横向电流促进空穴传输能力
机译:4H-siC功率BJT具有高电流增益和低导通电阻