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COMPOSITION AND METHOD FOR LOW TEMPERATURE CHEMICAL VAPOR DEPOSITION OF SILICON-CONTAINING FILMS INCLUDING SILICON CARBONITRIDE AND SILICON OXYCARBONITRIDE FILMS
COMPOSITION AND METHOD FOR LOW TEMPERATURE CHEMICAL VAPOR DEPOSITION OF SILICON-CONTAINING FILMS INCLUDING SILICON CARBONITRIDE AND SILICON OXYCARBONITRIDE FILMS
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机译:包含硅碳氮化物和硅氧碳氮化物膜的含硅薄膜的低温化学气相沉积的组成和方法
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摘要
Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g., 550° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.
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机译:用于在半导体器件制造中形成含硅膜的硅前体,例如包括碳氮化硅,氧碳氮化硅和氮化硅(Si 3 Sub> N 4 Sub>)的膜,以及一种使用低温(例如,<550℃)化学气相沉积工艺在衬底上沉积硅前体的方法,用于制造ULSI器件和器件结构。
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