Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films

摘要

Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si₃N₄), and a method of depositing the silicon precursors on substrates using low temperature (e.g., 550° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.