Ion beam-induced chemical vapor deposition with hexamethyldisilane for hydrogenated amorphous silicon carbide and silicon carbonitride films

摘要

We report on the preparation of hydrogenated amorphous silicon carbide (a-SiC:H) film and silicon carbonitride (a-SiCN:H) film on Si (100) substrate by Ar ion beam-induced chemical vapor deposition (IBICVD) method attached with a bubbling system of hexamethyldisilane (HMDS). Ar ions and HMDS precursor with carrier gases of Ar or N-2 were introduced onto the substrate at room temperature. Fourier transform infrared (FT-IR) spectra revealed that an elimination of an organic compound and the formation of Si-C, Si-N and C-N bonds can be promoted by increasing ion impact energy. Smooth surface with a lower roughness has been achieved when Ar ion energy increases from 50 to 300 eV (C) 2003 Elsevier Science B.V. All rights reserved. [References: 21]