Remote hydrogen microwave plasma chemical vapor deposition of silicon carbonitride films from a (dimethylamino) dimethylsilane precursor: Compositional and structural dependencies of film properties

摘要

The physical, optical, and mechanical properties of amorphous hydrogenated silicon carbonitride (a-Si:C:N:H) films produced by the remote hydrogen plasma chemical vapor deposition (RP-CVD) from (dimethylammo)dimethylsilane have been investigated in relation to their chemical composition and structure. The films deposited at different substrate temperature (30-400 deg C) were characterized in terms of their density, refractive index, adhesion to a substrate, hardness, elastic modulus, friction coefficient, and resistance to wear predicted from the "plasticity index" values. The correlations between the film compositional parameters, expressed by the atomic concentration ratios N/Si and C/Si, as well as structural parameters described by the relative integrated intensities of the absorption IR bands from the Si-N, Si-C, and ON bonds, and the XPS Si2p band from the Si-C bonds (controlled by substrate temperature) were investigated. On the basis of the results of these studies, reasonable compositional and structural dependencies of film properties have been determined.