Silicon precursors to make ultra low-K films of K2.2 with high mechanical properties by plasma enhanced chemical vapor deposition

摘要

A method for depositing a low dielectric constant film on a substrate is provided. The low dielectric constant film is deposited by a process comprising reacting one or more organosilicon compounds and a porogen and then post-treating the film to create pores in the film. The one or more organosilicon compounds include compounds that have the general structure Si—C_X—Si or —Si—O—(CH₂)_n—O—Si—. Low dielectric constant films provided herein include films that include Si—C_X—Si bonds both before and after the post-treatment of the films. The low dielectric constant films have good mechanical and adhesion properties, and a desirable dielectric constant.