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SUBSTRATE DICING BY LASER ABLATION amp; PLASMA ETCH DAMAGE REMOVAL FOR ULTRA-THIN WAFERS
SUBSTRATE DICING BY LASER ABLATION amp; PLASMA ETCH DAMAGE REMOVAL FOR ULTRA-THIN WAFERS
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机译:激光烧蚀和等离子刻蚀损伤的基片切割,用于超薄晶圆
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摘要
Methods of dicing substrates having a plurality of ICs. A method includes forming a mask, patterning the mask with a femtosecond laser scribing process to provide a patterned mask with gaps, and ablating through an entire thickness of a semiconductor substrate to singulate the IC. Following laser-based singulation, a plasma etch is performed to remove a layer of semiconductor sidewall damaged by the laser scribe process. In the exemplary embodiment, a femtosecond laser is utilized and a 1-3 μm thick damage layer is removed with the plasma etch. Following the plasma etch, the mask is removed, rendering the singulated die suitable for assembly/packaging.
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