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Methods for Forming FinFETs with Self-Aligned Source/Drain
Methods for Forming FinFETs with Self-Aligned Source/Drain
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机译:具有自对准源极/漏极的FinFET的形成方法
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摘要
A method includes forming a gate stack to cover a middle portion of a semiconductor fin, and doping an exposed portion of the semiconductor fin with an n-type impurity to form an n-type doped region. At least a portion of the middle portion is protected by the gate stack from receiving the n-type impurity. The method further includes etching the n-type doped region using chlorine radicals to form a recess, and performing an epitaxy to re-grow a semiconductor region in the recess.
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