30 nm self-aligned FinFET with large source/drain fan-out structure

摘要

A 30 nm self-aligned FinFET with a large single-crystalline source/drain structure is proposed and has been fabricated. The fabricated FinFET shows large intrinsic transconductance of 1070 /spl mu/S//spl mu/m at 0.8 V gate overdrive and good short channel behaviour in spite of thick gate oxide of 3.6 nm.