Resistive switching random access memory structure and method to recreate filament and recover resistance window

摘要

The present disclosure provides one embodiment of a method for operating a resistive random access memory (RRAM) cell. The method includes performing a forming operation to the RRAM cell with a forming voltage; performing a number of set/reset operation cycles to the RRAM cell; and performing a recreating process to the RRAM cell to recover RRAM resistance by applying a recreating voltage. Each of the number of set/reset operation cycles includes a set operation with a set voltage. The recreating voltage is greater than the set voltage.