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Wafer level chip scale package and method of fabricating wafer level chip scale package

机译:晶片级芯片规模封装及其制造方法

摘要

A wafer level chip scale package includes a first dielectric layer having a first surface, a second surface, and a main through hole passing through the first dielectric layer between the first and second surfaces. A semiconductor die is disposed in the main through hole of the first dielectric layer and including a bond pad disposed away from the first surface of the first dielectric layer. A redistribution layer is electrically connected to the bond pad of the semiconductor die and extends along the second surface of the first dielectric layer. A second dielectric layer covers the first dielectric layer and the redistribution layer and has an opening exposing the redistribution layer. An under bump metal fills the opening of the second dielectric layer and is electrically connected to the redistribution layer. A solder ball is electrically connected to the under bump metal.
机译:晶片级芯片规模封装包括:第一介电层,其具有第一表面,第二表面;以及主通孔,所述主通孔在所述第一表面和第二表面之间穿过所述第一介电层。半导体管芯设置在第一介电层的主通孔中,并且包括远离第一介电层的第一表面设置的键合焊盘。重分布层电连接到半导体管芯的键合焊盘,并沿着第一介电层的第二表面延伸。第二介电层覆盖第一介电层和重分布层,并具有暴露该重分布层的开口。下凸块金属填充第二介电层的开口并且电连接到重分布层。焊球电连接至下凸块金属。

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