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Semiconductor device and method for manufacturing a semiconductor device having a maximal carrier concentration at multiple carrier concentration peak positions
Semiconductor device and method for manufacturing a semiconductor device having a maximal carrier concentration at multiple carrier concentration peak positions
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机译:半导体器件和用于制造在多个载流子浓度峰值位置处具有最大载流子浓度的半导体器件的方法
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摘要
A semiconductor device includes a semiconductor substrate having a collector layer in which the carrier concentration is maximized at a carrier concentration peak position that is 1 μm or more from a surface of the semiconductor substrate. The semiconductor device further includes a collector electrode formed in contact with a surface of the collector layer.
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