METHOD OF SETTING CARRIER CONCENTRATION IN SEMICONDUCTOR LAYER AND METHOD OF SETTING CARRIER CONCENTRATION IN SEMICONDUCTOR LASER

摘要

PROBLEM TO BE SOLVED: To provide a method for setting the carrier concentration in a semiconductor layer which raises the carrier concentration in the semiconductor layer of AlGaInP, without changing the composition ratio. ;SOLUTION: In a semiconductor laser having a n-type AlGaInP clad layer 3, an active layer 4, and a p-type AlGaInP clad layer 5 formed on a main plane of a GaAs substrate 1, Si is added as a donor to the n-type clad layer 3, Zn is added as an acceptor to the p-type clad layer 5, the main plane of the GaAs substrate 1 to the 011 direction from (100) plane to set, so that the carrier concn. of the p-type clad layer 5 is higher than that, when the main plane is the (100) plane.;COPYRIGHT: (C)1999,JPO