Theory of the Decay of Excess Carrier Concentrations in Semiconductors

摘要

Differential equations are presented for the decay of excess carrier concentrations in semiconductors by Shockley-Ready and Auger processes involving recombination centres. An exact solution is obtained for the interaction of centres with the conduction band only and an approximate solution for the interaction with both bands. For the oneband case three ranges of excess concentration can, in principle, be distinguished in one of which the decay is exponential. For the two-band case there are four ranges, in three of which the decay is exponential. The theory applies also in the presence of a constant electric field. For small departures from equilibrium the results agree with those derived earlier by a different method. (Author)