Method of measuring free carrier concentration and/or thickness of a semiconductor and process of manufacturing semiconductor device and semiconductor wafer using such method

摘要

The invention provides a method of measuring a carrier concentration and/or thickness of a semiconductor, which includes the steps of determining the carrier concentration by optical measurement means using a light having at least a frequency band which causes light absorption by free carriers in the semiconductor. A reflection amplitude ratio and a phase of the light or the result of measurement of substitute parameters therefor are obtained by the optical measurement means, and the carrier concentration and/or thickness is determined based on the reflection amplitude ratio and the phase or said result of measurement of the substitute parameter therefor.