Analytical procedure for experimental quantification of carrier concentration in semiconductor devices by using electric scanning probe microscopy

摘要

Scanning capacitance microscopy (SCM) is based on a contact-mode variant of atomic force microscopy, which is used for imaging two-dimensional carrier (electrons and holes) distributions in semiconductor devices. We introduced a method of quantification of the carrier concentration by experimentally deduced calibration curves, which were prepared for semiconductor materials such as silicon and silicon carbide. The analytical procedure was circulated to research organizations in a round-robin test. The effectiveness of the method was confirmed for practical analysis and for what is expected for industrial pre-standardization from the viewpoint of comparability among users. It was also applied to other electric scanning probe microscopy techniques such as scanning spreading resistance microscopy and scanning nonlinear dielectric microscopy. Their depth profiles of carrier concentration were found to be in good agreement with those characterized by SCM. These results suggest that our proposed method will be compatible with future next-generation microscopy.