POLISHING AGENT COMPOSITION FOR CMP AND METHOD FOR MANUFACTURING A DEVICE WAFER USING SAID POLISHING AGENT COMPOSITION FOR CMP

摘要

Provided is a polishing agent composition for CMP, capable of minimizing the generation of scratches and giving the surface of a device wafer a good evenness.　The polishing agent for chemical and mechanical polishing of the invention contains following components (A), (B) and (C).　Component (A): surface-modified inorganic oxide particles modified by a group in which the surface of the inorganic oxide particles contains a polyglycerol chain . Component (B): polishing agent. Component (C): water. Preferably particles of titanium oxide, silicon oxide, aluminium oxide, zirconium oxide or zinc oxide are used as inorganic oxide particles in the component (A).