METAL CMP POLISHING COMPOSITION COMPRISING POLISHING AGENT, OXIDANT, AT LEAST ONE KIND OF COMPLEXING AGENT SELECTED FROM POLY(CARBOXYLIC ACID)-BASED COPOLYMER OR ITS SALT, PHOSPHORIC ACID-BASED COMPOUND AND SULFONIC ACID-BASED COMPOUND, AND ANIONIC SURFACTANT, AND POLISHING METHOD OF METAL USING THE COMPOSITION

摘要

PURPOSE: Provided are a metal CMP polishing composition which is excellent in the polishing rate to a metal layer, the polishing selectivity to oxides and tantalum nitride and the decomposition stability to the oxidant contained in slurry, and a method for polishing a metal by using the composition. CONSTITUTION: The metal CMP polishing composition comprises 0.5-10 wt% of a polishing agent; 0.1-15 wt% of an oxidant; 0.1-10 wt% of at least one kind of complexing agent selected from a poly(carboxylic acid)-based copolymer or its salt, a phosphoric acid-based compound and a sulfonic acid-based compound; and 0.001-0.3 wt% of an anionic surfactant. Preferably the poly(carboxylic acid)-based copolymer or its salt has at least one structural unit represented by the formula 1, wherein R1 to R3 are identical or different one another and are H, a methyl group an ethyl group or (CH2)m2COOM1; M1 and M2 are identical or different each other and are H, an alkali metal, an alkaline earth metal, an ammonium group, an alkyl ammonium group or a substituted alkyl ammonium group; and m1 and m2 are an integer of 0-2.