CMP SLURRY HAVING IMPROVED POLISHING SELECTIVITY AND DISPERSION STABILITY BY INCLUDING A NONIONIC COMPOUND WITH A PYRIDINE-BASED COMPOUND AND/OR A BENZOIC ACID-BASED COMPOUND

摘要

PURPOSE: CMP slurry is provided to improve polishing speed of a silicone oxide film, to enhance polishing selectivity between the silicon oxide film and a silicon nitride film, and to prevent a filter from being blocked in a filtering process for removing impurities.;CONSTITUTION: CMP slurry includes a substance which is selected from a group comprising a pyridine-based compound and a benzoic acid-based compound and a nonionic compound which is selected from a group comprising polyoxypropylene ether and polyoxyethylene oxypropylene copolymer. The nonionic compound is selected from a group comprising a chemical formula 1 or a chemical formula 2. The chemical formula 1 is R(OCHCH_3CH_2)_n-OR and the chemical formula 2 is RO(CH_2CH_2O)_x(CH(CH_3)CH_2O)_y(CH_2CH_2O)_z-OR. In the chemical formula 1, R and R' are a hydrogen or an alkyl group with a carbon number of 1~18.;COPYRIGHT KIPO 2010