POWERFUL suppressor diodes

摘要

The invention relates to the field of microelectronics. Powerful quick clamping diode includes ohmic contacts, means for heat removal and a multilayer epitaxial structure. Wherein the means for the heat sink formed of thermally conductive layer CVD polycrystalline diamond, the surface of which is applied by galvanic deposition layer of gold over a layer of gold are sequentially arranged epitaxial layers - highly doped layer of n + GaN, an undoped layer of gallium nitride and the heavily doped layer p + nitride Gaul. Furthermore, the diode further includes a protective cover made of a thermally conductive insulating polycrystalline CVD diamond. The technical result is to increase the signal gain reduction while ensuring high level of input power. 1 bp f-ly, 3 Fig.