首页> 外国专利> MANUFACTURING METHOD OF SILICON CARBIDE-COATED GRAPHITE MEMBER, SILICON CARBIDE COATED GRAPHITE MEMBER, AND MANUFACTURING METHOD OF SILICON CRYSTAL

MANUFACTURING METHOD OF SILICON CARBIDE-COATED GRAPHITE MEMBER, SILICON CARBIDE COATED GRAPHITE MEMBER, AND MANUFACTURING METHOD OF SILICON CRYSTAL

机译:碳化硅涂层石墨构件的制造方法,碳化硅涂层石墨构件的制造以及晶体的制造方法

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a silicon carbide-coated graphite member in which life of a graphite component is significantly increased by effectively suppressing conversion of the graphite component used in a silicon crystal manufacturing apparatus and the like into an SiC layer.;SOLUTION: There is provided a manufacturing method of a silicon carbide-coated graphite member 5 in which by coating and impregnating 3 silicone oil into a graphite component 2 on a surface of which an SiC layer 1 is formed and firing the component, the SiC layer is densified 4. After the component is air-dried or heated and dried at temperature of 100°C or lower after coating and impregnating 3 the silicone oil, the firing is performed at the highest firing temperature of 1,500°C or higher through one stage or more of heating steps in an inert gas atmosphere.;COPYRIGHT: (C)2015,JPO&INPIT
机译:解决的问题:提供一种涂覆有碳化硅的石墨构件的制造方法,其中,通过有效地抑制在硅晶体制造装置等中使用的石墨组分向SiC层的转化,显着增加了石墨组分的寿命。解决方案:提供了一种涂覆有碳化硅的石墨构件5的制造方法,其中,通过将3硅油涂覆并浸渍到形成有SiC层1的表面上的石墨组分2中并烧制该组分, SiC层被致密化4.涂覆并浸渍3硅油后,将组件风干或加热并在100°C或更低的温度下干燥,然后在1500°C或更高的最高焙烧温度下进行焙烧。在惰性气体气氛中进行一个或多个阶段的加热步骤;版权所有:(C)2015,JPO&INPIT

著录项

  • 公开/公告号JP2015107896A

    专利类型

  • 公开/公告日2015-06-11

    原文格式PDF

  • 申请/专利权人 SHIN ETSU HANDOTAI CO LTD;

    申请/专利号JP20130252246

  • 发明设计人 SUGAWARA TAKAYO;ONAI TAKAHIDE;HOSHI RYOJI;

    申请日2013-12-05

  • 分类号C04B41/87;C04B41/82;C01B31/04;C01B31/36;

  • 国家 JP

  • 入库时间 2022-08-21 15:35:19

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