REGENERATING METHOD OF SILICON CARBIDE-COATED GRAPHITE ELEMENT AND SILICON CARBIDE-COATED GRAPHITE ELEMENT BY THE METHOD

摘要

PROBLEM TO BE SOLVED: To provide a regenerating method of a SiC coated-graphite element, and a SiC coated-graphite element which is regenerated by the method. The SiC-coated graphite element which has become its life end consisting of a SiC- coated graphite element, and used as an element for pulling up monocrystal, and as a suscepter for the epitaxial growth of a silicon wafer in a semiconductor manufacturing process which can homogeneously remove surface-coated SiC, can use a small type exhaust gas treating device and can reduce the semiconductor manufacturing cost.;SOLUTION: The SiC-coated graphite element is reused after coating SiC with CVD method on the base material which is evaporated the surface coated SiC at a temperature not less than 1700°C, under pressure not higher than 1.33 kPa, in an innert gas atmosphere or under pressure not higher than 1.33 kPa in an innert gas atmosphere.;COPYRIGHT: (C)2002,JPO