Large diameter high quality SiC single crystal, method and apparatus

摘要

A method and system for forming large diameter SiC single crystals suitable for the manufacture of 100, 125, 150 and 200 mm high quality crystalline SiC substrates. The SiC single crystal is grown by a sublimation technique using a seed in the presence of a shallow radial temperature gradient. During SiC sublimation growth, the SiC-containing vapor stream filtered from the carbon particles is restricted to the central region of the surface of the seed crystal by a dividing plate placed between the seed crystal and the raw material of the SiC-containing vapor. The divider plate includes a first substantially vapor permeable portion and a second substantially vapor impermeable portion surrounding the first portion. The grown crystal has a flat or slightly convex growth interface. Large diameter SiC wafers made from grown crystals exhibit low lattice curvature and low density for crystal defects such as stacking faults, contaminants, micropipes and dislocations. [Selection] Figure 6