Method of solid phase recrystallization of thin films using pulsed train annealing

摘要

Embodiments of the present invention provide methods of solid-phase recrystallization of thin films using multiple pulses of electromagnetic energy. In one embodiment, the amorphous layer is deposited so as to recrystallize and have the same grain structure and crystal orientation as the underlying crystalline seed region or seed layer, to a crystalline seed region or seed layer The method of the present invention may be used to anneal the entire surface of the substrate or the selected region of the surface of the substrate by providing pulses.