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HIGH VOLTAGE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR INTEGRATED INTO EXTREMELY THIN SEMICONDUCTOR ON INSULATOR PROCESS
HIGH VOLTAGE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR INTEGRATED INTO EXTREMELY THIN SEMICONDUCTOR ON INSULATOR PROCESS
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机译:将高压金属氧化物半导体场效应晶体管集成到绝缘子工艺中的极薄半导体中
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摘要
An electrical device including a first semiconductor device in a first region of the SOI substrate and a second semiconductor device is present in a second region of the SOI substrate. The first semiconductor device comprises a first source and drain region that is present in the SOI layer of the SOI substrate, raised source and drain regions on the first source and drain regions, and a first gate structure on a channel region portion of the SOI layer. The second semiconductor device comprises a second source and drain region present in a base semiconductor layer of the SOI substrate and a second gate structure, wherein a gate dielectric of the second gate structure is provided by a buried dielectric layer of the SOI substrate and a gate conductor of the second gate structure comprises a same material as the raised source and drain region.
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