Solution Processed High-k Lanthanide Oxides for Low Voltage Driven Transparent Oxide Semiconductor Thin Film Transistors

摘要

ZnO-based low power operating thin film transistors (TFTs) were fabricated by a simple and robust solution process. Combined the amorphous oxide semiconductors with the high capacitance lanthanide oxides thin film, Y_2O_3 and Gd_2O_3, as a gate insulator, the resultant device exhibits an enhanced device performance; lower threshold voltage, increased carrier mobility, and smaller subthreshold slope with exceptionally low operating voltage than the typical TFT devices using a SiO_ gate insulator.