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A SEMICONDUCTOR DEVICE COMPRISING AN ESD PROTECTION DEVICE, AN ESD PROTECTION CIRCUITRY, AN INTEGRATED CIRCUIT AND A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
A SEMICONDUCTOR DEVICE COMPRISING AN ESD PROTECTION DEVICE, AN ESD PROTECTION CIRCUITRY, AN INTEGRATED CIRCUIT AND A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
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机译:包括ESD保护装置,ESD保护电路,集成电路的半导体装置以及制造半导体装置的方法
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摘要
A semiconductor device is provided which comprises an ESD protection device. The ESD protection device is being formed by one or more pnp transistors which are present in the structure of the semiconductor device. The semiconductor device comprises two portions, of an isolated p-doped region which are separated by an N-doped region. Two p-doped regions are provided within the two portions. The p-dopant concentration of the two-doped region is higher than the p-dopant concentration of the isolated p-doped region. A first electrical contact is connected only via a highly doped p-contact region to the first p-doped region and a second electrical contact is connected only via another highly doped p-contact region to the second p-doped region.
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