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SEMICONDUCTOR DEVICE COMPRISING AN ESD PROTECTION DEVICE, AN ESD PROTECTION CIRCUITRY, AN INTEGRATED CIRCUIT AND A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE COMPRISING AN ESD PROTECTION DEVICE, AN ESD PROTECTION CIRCUITRY, AN INTEGRATED CIRCUIT AND A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
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机译:包括ESD保护装置,ESD保护电路,集成电路以及制造半导体装置的方法的半导体装置
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摘要
A semiconductor device includes an ESD protection device. In a N-well, two P+ doped regions form a collector and emitter of a parasitic transistor of the ESD protection device. The N-well area between the P+ doped regions, forms a base of the parasitic transistor. At some distance away from the P+ doped regions an N+ doped region is provided. The N-well in between the N+ doped region and base of the transistor forms a parasitic resistor of the ESD protection device. The N+ doped region and the emitter of the transistor are coupled to each other via an electrical connection. The ESD protection device has a limited snapback behaviour and has a well-tunable trigger voltage.
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机译:半导体器件包括ESD保护器件。在一个N阱中,两个P +掺杂区域形成了ESD保护器件的寄生晶体管的集电极和发射极。 P +掺杂区之间的N阱区形成了寄生晶体管的基极。在距P +掺杂区一定距离处,提供N +掺杂区。 N +掺杂区和晶体管基极之间的N阱形成ESD保护器件的寄生电阻。 N +掺杂区和晶体管的发射极通过电连接彼此耦合。 ESD保护器件的回跳行为有限,并且触发电压可调。
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