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NON-VOLATILE MEMORY (NVM) AND HIGH-K AND METAL GATE INTEGRATION USING GATE-LAST METHODOLOGY
NON-VOLATILE MEMORY (NVM) AND HIGH-K AND METAL GATE INTEGRATION USING GATE-LAST METHODOLOGY
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机译:非易失性存储器(NVM)和高k与金属门集成的后栅极方法
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摘要
A method of making a semiconductor structure uses a substrate and includes a logic device in a logic region and a non-volatile memory (NVM) device in an NVM region. An NVM structure is formed in the NVM region. The NVM structure includes a control gate structure and a select gate structure. A protective layer is formed over the NVM structure. A gate dielectric layer is formed over the substrate in the logic region. The gate dielectric layer includes a high-k dielectric. A sacrificial gate is formed over the gate dielectric layer in the logic region. A first dielectric layer is formed around the sacrificial gate. Chemical mechanical polishing is performed on the NVM region and the logic region after forming the first dielectric layer. The sacrificial gate is replaced with a metal gate structure.
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