DUAL GATE OXIDE TRENCH MOSFET WITH CHANNEL STOP TRENCH
展开▼
机译:具有沟道停止沟槽的双栅极氧化物沟槽MOSFET
展开▼
页面导航
摘要
著录项
相似文献
摘要
A semiconductor device has a plurality of gate electrodes over a gate insulator layer formed in active trenches located in an active region of a semiconductor substrate. A first gate runner is formed in the semiconductor substrate and electrically connected to the gate electrodes. The first gate runner abuts and surrounds the active region. A second gate runner is connected to the first gate runner to make contact to a gate metal. A dielectric filled trench surrounds the first and second gate runners and the active region and a highly doped channel stop region is formed under the dielectric filled trench.
展开▼