METHOD OF FORMING YBa2Cu3O7-x films with high current-carrying capacity for gold buffer sublayer

摘要

YBaCuOplenok method of forming a high current-carrying capacity of a buffer on a gold sublayer, wherein the contact pad is formed prior to application of films YBaCuOna dielectric substrate, characterized in that for the sputtering of targets made of gold and ceramic YBaCuOispolzuetsya laser with a wavelength of λ = 1,06 microns, a pulse duration τ = 10 ÷ 20 ns and a pulse repetition frequency ν = 10 Hz, the laser power density P = (5 ÷ 7) · 10W / cm, with the preheated target made of gold and the substrate to a temperature T = 450 ÷ 500 ° C, establishes I p = pressure of 0.1 ÷ 0.5 Pa, then sprayed a gold target located at a distance of 4 ÷ 6 mm to the substrate on the substrate through a mask spaced 0.3 ÷ 0.5 mm from the substrate and forming a film variable thickness 0 ÷ 500 nm, then heated target YBaCuOdo T = 600 ÷ 700 ° C is situated at a distance of 25 ÷ 30 mm from the substrate heats the substrate to a temperature T = 800 ÷ 840 ° C, set pressure p = 50 ÷ 100 Pa, after a target which is sprayed YBaCuO, formed on the contact pads to a thickness L = 50 ÷ 200 nm to form films having a critical temperature semicontinuous hprovodyaschego transition T≈88 ÷ 89 ° K, the superconducting transition width ΔTc 2 ± 3 ° K, the critical current density J 10A / cm.