YBa2Cu3O7-x films on oxide buffer layer with perovskite structure prepared by metal-organic deposition method

摘要

BaZrO3 (BZO) with perovskite structure is a candidate as a buffer layer for YBa2Cu3O7-x (YBCO) coated conductors because it is chemically stable and does not react with YBCO at high temperatures. It has also excellent chemical compatibility with YBCO and good lattice matching with MgO and NiO substrates. We have tried to fabricate BZO buffer layers on MgO(001) single crystal substrates by metal-organic deposition method and to deposit YBCO films on these buffers by pulsed laser deposition. We obtained J(c) value of 0.49 MA/cm(2) for YBCO films deposited at 710 degreesC on the BZO buffer annealed at 600 degreesC. From high resolution scanning electron microscope observation, we found the surface roughness of BZO buffer affected the texture and J(c) of YBCO films. (C) 2003 Elsevier B.V. All rights reserved. [References: 14]