METHOD FOR FORMING GALLIUM NITRIDE TEMPLATE SEMI-POLAR (20-23) ORIENTATION ON SILICON SUBSTRATE AND SEMICONDUCTOR LIGHT-EMPTING DEVICE, MANUFACTURING USING THE METHOD

摘要

1. The method of forming the template of a semiconductor light-emitting device, characterized in that on the silicon substrate in the reactor with an orientation of (100) misoriented by 1-10˚ in the 011 direction, nanowires are formed on its surface by heating to a temperature of 1270-1290˚С after which a longitudinal wedge-shaped protrusion of silicon carbide is formed at each stage along the edge of the atmosphere along the edge of the carbon monoxide with an apex protruding above the stage platform and having an inclined edge extending to the site of the lower stage to form a slope angle of 30-40 °, and on the formed folded surface by the method of vapor phase epitaxy hydride, a buffer layer of aluminum nitride is synthesized, on which the gallium nitride layer of a semi-polar (20-23) orientation is formed by the same method, after which the silicon substrate is removed by etching. 2. A semiconductor light-emitting device, characterized in that it includes electrodes and a template on which the active layers of the device are formed, while the template is based on a layer of gallium nitride of a semi-polar (20-23) orientation, formed on a buffer layer of aluminum nitride deposited on folded surface of a silicon carbide layer. 3. The semiconductor light emitting device according to claim 2, characterized in that the template is formed according to the method according to claim 1.