Low-resistance ohmic contacts to heteroepitaxial structures based on gallium nitride

摘要

The invention relates to manufacturing technology of low-resistance ohmic contacts to the solid state devices based on gallium nitride (GaN). The proposed utility model provides a low-resistance ohmic contact to gallium nitride with the value of the magnitude of the specific transition resistance ~ 0.2 Ohm * mm while simplifying its manufacturing process. Technical result is achieved by the fact that in the proposed device including successive layers of titanium - silicon -, titanium - aluminum - nickel - gold in the heteroepitaxial structure of gallium nitride according to the utility model, between the layers of gallium nitride and silicon is a further titanium layer thickness of 5-10 nm.