Thin film transistor formed by the manufacturing method and the manufacturing method method of reverse printing a conductive ink and a thin film transistor

摘要

Permissible time range for all transferring formed on a blanket pattern to a support (range) to provide a wider letterpress reverse printing conductive ink. Volume average particle diameter (Mv) is conductive particles of 2 250Nm, containing fluorine-based surface energy modifiers and / or silicone-based surface energy adjusting agents, and liquid comprising an organic solvent containing water as an essential component characterized in that it dispersed in the medium, the conductive particles letterpress reverse printing conductive ink for forming a conductive pattern by inter-particle fusion bonding, and on the support, the conductive ink using the coating film pattern is formed by letterpress reverse printing, and then a method of manufacturing a thin film transistor which is characterized in that it comprises a step of forming a coating film pattern the conductive particles electrically conductive pattern is inter-particle melt-bonded in, and a thin film transistor .